PBSS5350X,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.When VCE saturation is 390mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.This device can take an input voltage of 50V volts before it breaks down.In extreme cases, the collector current can be as low as 3A volts.
PBSS5350X,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 390mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5350X,115 Applications
There are a lot of Nexperia USA Inc. PBSS5350X,115 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
