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DP350T05-7

DP350T05-7

DP350T05-7

Diodes Incorporated

DP350T05-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DP350T05-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -350V
Max Power Dissipation300mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DP350T05
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300mW
Transistor Application SWITCHING
Gain Bandwidth Product50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage350V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage-1V
Max Breakdown Voltage 350V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) -5V
hFE Min 20
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:24212 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$14.093418$14.093418
10$13.295677$132.95677
100$12.543092$1254.3092
500$11.833106$5916.553
1000$11.163307$11163.307

DP350T05-7 Product Details

DP350T05-7 Overview


This device has a DC current gain of 20 @ 50mA 10V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -1V, it allows for maximum design flexibility.A VCE saturation (Max) of 1V @ 5mA, 50mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.50MHz is present in the transition frequency.This device can take an input voltage of 350V volts before it breaks down.Collector current can be as low as 500mA volts at its maximum.

DP350T05-7 Features


the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz

DP350T05-7 Applications


There are a lot of Diodes Incorporated DP350T05-7 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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