MMBT5401-7-F Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages should be kept at -200mA to achieve high efficiency.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.This device has a current rating of -200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 100MHz in the part.Breakdown input voltage is 150V volts.A maximum collector current of -600mA volts can be achieved.
MMBT5401-7-F Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 100MHz
MMBT5401-7-F Applications
There are a lot of Diodes Incorporated MMBT5401-7-F applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
