Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2PA1576S,115

2PA1576S,115

2PA1576S,115

Nexperia USA Inc.

2PA1576S,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2PA1576S,115 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 70
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation200mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2PA1576
Pin Count3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200mW
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 100MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
VCEsat-Max 0.5 V
Collector-Base Capacitance-Max 3.5pF
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:32191 items

Pricing & Ordering

QuantityUnit PriceExt. Price

2PA1576S,115 Product Details

2PA1576S,115 Overview


In this device, the DC current gain is 270 @ 1mA 6V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.100MHz is present in the transition frequency.Breakdown input voltage is 50V volts.When collector current reaches its maximum, it can reach 150mA volts.

2PA1576S,115 Features


the DC current gain for this device is 270 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

2PA1576S,115 Applications


There are a lot of Nexperia USA Inc. 2PA1576S,115 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

Get Subscriber

Enter Your Email Address, Get the Latest News