50A02MH-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 10mA 2V.The collector emitter saturation voltage is -60mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 120mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A transition frequency of 690MHz is present in the part.An input voltage of 50V volts is the breakdown voltage.During maximum operation, collector current can be as low as 500mA volts.
50A02MH-TL-E Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -60mV
the vce saturation(Max) is 120mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 690MHz
50A02MH-TL-E Applications
There are a lot of ON Semiconductor 50A02MH-TL-E applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
