BFN27E6327HTSA1 Overview
DC current gain in this device equals 30 @ 30mA 10V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -200mA.As a result, the part has a transition frequency of 100MHz.Input voltage breakdown is available at 300V volts.A maximum collector current of 200mA volts is possible.
BFN27E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -200mA
a transition frequency of 100MHz
BFN27E6327HTSA1 Applications
There are a lot of Infineon Technologies BFN27E6327HTSA1 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
