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2SA1706T-AN

2SA1706T-AN

2SA1706T-AN

ON Semiconductor

2SA1706T-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1706T-AN Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case SC-71
Number of Pins 3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2012
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Max Power Dissipation1W
Pin Count3
Power - Max 1W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 1A
Collector Emitter Breakdown Voltage50V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:35620 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.348535$0.348535
10$0.328806$3.28806
100$0.310195$31.0195
500$0.292636$146.318
1000$0.276072$276.072

2SA1706T-AN Product Details

2SA1706T-AN Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 1A.Emitter base voltages of 6V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.

2SA1706T-AN Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 700mV @ 50mA, 1A
the emitter base voltage is kept at 6V

2SA1706T-AN Applications


There are a lot of ON Semiconductor 2SA1706T-AN applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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