2SB1260T100R Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 100mA 3V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.The part has a transition frequency of 100MHz.As a result, it can handle voltages as low as 80V volts.Maximum collector currents can be below 1A volts.
2SB1260T100R Features
the DC current gain for this device is 180 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
2SB1260T100R Applications
There are a lot of ROHM Semiconductor 2SB1260T100R applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
