JANTX2N5582 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.When collector current reaches its maximum, it can reach 800mA volts.
JANTX2N5582 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
JANTX2N5582 Applications
There are a lot of Microsemi Corporation JANTX2N5582 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
