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2N4150

  • 2N4150 - 2N4150 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
  • 2N4150 - 2N4150 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

2N4150

2N4150

Microsemi Corporation

2N4150 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N4150 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Contact PlatingLead, Tin
Mount Through Hole
Number of Pins 3
PackagingBulk
Part StatusActive
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation1W
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 10A
Collector Base Voltage (VCBO) 100V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:834 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$10.85280$1085.28

2N4150 Product Details

2N4150 Overview


A maximum collector current of 10A volts can be achieved.

2N4150 Features



2N4150 Applications


There are a lot of Microsemi Corporation 2N4150 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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