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PHD13003C,412

PHD13003C,412

PHD13003C,412

WeEn Semiconductors

PHD13003C,412 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHD13003C,412 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature150°C TJ
PackagingBulk
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power - Max 2.1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1.5A
RoHS StatusRoHS Compliant
In-Stock:16995 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.175680$0.17568
10$0.165736$1.65736
100$0.156355$15.6355
500$0.147504$73.752
1000$0.139155$139.155

PHD13003C,412 Product Details

PHD13003C,412 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5 @ 1A 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A 400V maximal voltage - Collector Emitter Breakdown is present in the device.

PHD13003C,412 Features


the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A

PHD13003C,412 Applications


There are a lot of WeEn Semiconductors PHD13003C,412 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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