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FJN3301RTA

FJN3301RTA

FJN3301RTA

ON Semiconductor

FJN3301RTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJN3301RTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code8541.21.00.95
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation300mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating100mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 10V
hFE Min 20
Continuous Collector Current 100mA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:375936 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.096160$0.09616
500$0.070706$35.353
1000$0.058922$58.922
2000$0.054056$108.112
5000$0.050520$252.6
10000$0.046995$469.95
15000$0.045450$681.75
50000$0.044690$2234.5

FJN3301RTA Product Details

FJN3301RTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 10mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).In the part, the transition frequency is 250MHz.There is a breakdown input voltage of 50V volts that it can take.A maximum collector current of 100mA volts is possible.

FJN3301RTA Features


the DC current gain for this device is 20 @ 10mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 250MHz

FJN3301RTA Applications


There are a lot of ON Semiconductor FJN3301RTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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