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FZT7053TA

FZT7053TA

FZT7053TA

Diodes Incorporated

FZT7053TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT7053TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation6.25W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT7053
Pin Count4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 1.25W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 5V
Current - Collector Cutoff (Max) 200nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage100V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage1.5V
Max Breakdown Voltage 100V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 12V
hFE Min 10000
Continuous Collector Current 1.5A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9563 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.773206$0.773206
10$0.729440$7.2944
100$0.688151$68.8151
500$0.649199$324.5995
1000$0.612452$612.452

FZT7053TA Product Details

FZT7053TA Overview


This device has a DC current gain of 1000 @ 1A 5V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.For high efficiency, the continuous collector voltage must be kept at 1.5A.The emitter base voltage can be kept at 12V for high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.An input voltage of 100V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 1.5A volts.

FZT7053TA Features


the DC current gain for this device is 1000 @ 1A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
a transition frequency of 200MHz

FZT7053TA Applications


There are a lot of Diodes Incorporated FZT7053TA applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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