MJD47G Overview
This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
MJD47G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
MJD47G Applications
There are a lot of ON Semiconductor MJD47G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
