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PBSS303PZ,135

PBSS303PZ,135

PBSS303PZ,135

Nexperia USA Inc.

PBSS303PZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS303PZ,135 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 45.359237g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Frequency 130MHz
Base Part Number PBSS303P
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation700mW
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Gain Bandwidth Product130MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 5.3A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 265mV @ 265mA, 5.3A
Collector Emitter Breakdown Voltage30V
Transition Frequency 130MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 250
Turn Off Time-Max (toff) 320ns
Turn On Time-Max (ton) 70ns
Height 6.35mm
Length 12.7mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11984 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.048200$1.0482
10$0.988868$9.88868
100$0.932894$93.2894
500$0.880089$440.0445
1000$0.830273$830.273

PBSS303PZ,135 Product Details

PBSS303PZ,135 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 1A 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 265mV @ 265mA, 5.3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As a result, the part has a transition frequency of 130MHz.The breakdown input voltage is 30V volts.A maximum collector current of 5.3A volts can be achieved.

PBSS303PZ,135 Features


the DC current gain for this device is 250 @ 1A 2V
the vce saturation(Max) is 265mV @ 265mA, 5.3A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

PBSS303PZ,135 Applications


There are a lot of Nexperia USA Inc. PBSS303PZ,135 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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