Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IXFK360N15T2

IXFK360N15T2

IXFK360N15T2

IXYS

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET

SOT-23

IXFK360N15T2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2009
Series GigaMOS™
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Output Voltage 150V
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1670W Tc
Nominal Supply Current100A
Operating ModeENHANCEMENT MODE
Output Current360A
Case Connection DRAIN
Turn On Delay Time50 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 47500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 360A Tc
Gate Charge (Qg) (Max) @ Vgs 715nC @ 10V
Rise Time170ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 265 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 360A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 900A
Number of Drivers 1
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:280 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$21.26000$21.26
25$18.07120$451.78
100$16.79540$1679.54
500$14.88200$7441

About IXFK360N15T2

The IXFK360N15T2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFK360N15T2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News