IRF7469PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7469PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
17m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 20V
Current - Continuous Drain (Id) @ 25°C
9A Ta
Gate Charge (Qg) (Max) @ Vgs
23nC @ 4.5V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
In-Stock:4682 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.349860
$0.34986
10
$0.330056
$3.30056
100
$0.311374
$31.1374
500
$0.293749
$146.8745
1000
$0.277122
$277.122
IRF7469PBF Product Details
IRF7469PBF Description
IRF7469PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 40V. The operating temperature of the IRF7469PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7469PBF has 8 pins an it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7469PBF is 40V.
IRF7469PBF Features
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage and Current
IRF7469PBF Applications
High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High-Frequency Buck Converters for Computer Processor Power
Lead-Free
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