SIGC156T60NR2CX1SA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC156T60NR2CX1SA2 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C TJ
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
200A
Test Condition
300V, 200A, 1.5Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 200A
IGBT Type
NPT
Current - Collector Pulsed (Icm)
600A
Td (on/off) @ 25°C
180ns/285ns
RoHS Status
ROHS3 Compliant
In-Stock:2647 items
SIGC156T60NR2CX1SA2 Product Details
SIGC156T60NR2CX1SA2 Description
SIGC156T60NR2CX1SA2 is a single IGBT with a break down voltage of 600V from Infineon Technologies. SIGC156T60NR2CX1SA2 operates between -55°C~150°C TJ, and its maximum collector current is 200A. The SIGC156T60NR2CX1SA2 has three pins and it is available in Die packaging way. SIGC156T60NR2CX1SA2 has a 600V Voltage - Collector Emitter Breakdown (Max) value.
SIGC156T60NR2CX1SA2 Features
600V NPT technology
100μm chip
short circuit prove
positive temperature coefficient
easy paralleling
SIGC156T60NR2CX1SA2 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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