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NGTD30T120F2SWK

NGTD30T120F2SWK

NGTD30T120F2SWK

ON Semiconductor

NGTD30T120F2SWK datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTD30T120F2SWK Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case Die
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 200A
RoHS StatusROHS3 Compliant
In-Stock:3524 items

Pricing & Ordering

QuantityUnit PriceExt. Price
79$4.70873$371.98967

NGTD30T120F2SWK Product Details

NGTD30T120F2SWK Description


NGTD30T120F2SWK is a 1200V IGBT Die. The transistor NGTD30T120F2SWK can be supplied in industrial motor drives, solar inverters, UPS systems, and welding applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



NGTD30T120F2SWK Features


Extremely Efficient Trench with Field Stop Technology

Low VCE(sat) Loss Reduces System Power Dissipation

Gate?Emitter Voltage: ±20V

Maximum Junction Temperature: -55 to 175℃



NGTD30T120F2SWK Applications


Industrial Motor Drives

Solar Inverters

UPS Systems

Welding


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