IRG8CH20K10F Description
The IRG8CH20K10F is an N-Channel insulated gate bipolar transistor. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IRG8CH20K10F Features
VCES = 1200V
IC(Nominal) = 15A
TJ(max) = 175°C
VCE(on) typ = 1.7V @ IC= 15A
Low VCE(on) Trench IGBT Technology
Low Switching Losses
Very Soft Turn-off Characteristics
10μs Short Circuit SOA
Square RBSOA
Positive VCE(on) Temperature Coefficient
IRG8CH20K10F Applications
Industrial Motor Drives
UPS
HEV Inverter
Welding
