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APT70GR65B2SCD30

APT70GR65B2SCD30

APT70GR65B2SCD30

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

SOT-23

APT70GR65B2SCD30 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package T-MAX™ [B2]
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2001
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation595W
Power - Max 595W
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 134A
Collector Emitter Breakdown Voltage650V
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 134A
Test Condition 433V, 70A, 4.3Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 70A
IGBT Type NPT
Gate Charge305nC
Current - Collector Pulsed (Icm) 260A
Td (on/off) @ 25°C 19ns/170ns
RoHS StatusRoHS Compliant
In-Stock:4177 items

About APT70GR65B2SCD30

The APT70GR65B2SCD30 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features INSULATED GATE BIPOLAR TRANSISTO.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APT70GR65B2SCD30, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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