FGA6065ADF Description
Field Stop Trench third generation IGBT, which has exceptionally low Rds(on) and substantially faster switching characteristics for exceptional efficiency, was used in this ADF IGBT series. Furthermore, this type of technology is fully tuned for a range of PFC (Power Factor Correction) topologies, including Single boost, Multi channel interleaved, etc., with switching performance of over 20KHz. Super Low Thermal Resistance for Wider SOA for System Stability is provided by TO3P package.
FGA6065ADF Features
Maximum Junction Temperature : TJ = 175 °C
Positive Temperaure Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A
100% of the Parts Tested for ILM (1)
High Input Impedance
Fast Switching
RoHS Compliant
FGA6065ADF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
