SIGC05T60SNCX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
SIGC05T60SNCX1SA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-55°C~150°C TJ
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
4A
Test Condition
400V, 4A, 67Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 4A
IGBT Type
NPT
Current - Collector Pulsed (Icm)
12A
Td (on/off) @ 25°C
22ns/264ns
RoHS Status
ROHS3 Compliant
In-Stock:3086 items
SIGC05T60SNCX1SA1 Product Details
SIGC05T60SNCX1SA1 Description
The SIGC05T60SNCX1SA1 is an IGBT Chip in NPT-technology. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
SIGC05T60SNCX1SA1 Features
Short circuit prove
Positive temperature coefficient
Easy paralleling
600V NPT technology
100μm chip
SIGC05T60SNCX1SA1 Applications
Drives
Chopper and inverters
Solar inverters
AC and DC motor drives
Switched Mode Power Supply
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