IRG4CC30UB Description
IRG4CC30UB is a 600v IGBT Die in wafer form. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
IRG4CC30UB Features
Collector-to- Emitter Saturation Voltage: 2.2V
Colletor-to-Emitter Breakdown Voltage: 600V
Gate Threshold Voltage: 3.0~6.0V
Zero Gate Voltage Collector Current: 250μA
Gate-to-Emitter Leakage Current: ±1.1μA
IRG4CC30UB Applications
Automotive
Infotainment & cluster
Communications equipment
Wireless infrastructure
Personal electronics
Connected peripherals & printers
