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IRG4CC80SB

IRG4CC80SB

IRG4CC80SB

Infineon Technologies

IRG4CC80SB datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4CC80SB Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-55°C~150°C
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 600V
RoHS StatusROHS3 Compliant
In-Stock:4156 items

IRG4CC80SB Product Details

IRG4CC80SB Features

UltaFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

IGBT co-packaged with HEXFRED8 ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Industry-standard TO-220AB package

Lead-Free



IRG4CC80SB Benefits

Generation -4 IGBTs offer the highest efficiencies available

IGBTs optimized for specific application conditions

HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require less/ho snubbing

Designed to be a "drop-in" replacement for equivalent industry-standard Generation3 IR IGBTs


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