IRG7CH11K10EF Description
IRG7CH11K10EF is a 1200V N-channel insulated gate bipolar transistor. Low VCE(ON) and switching losses provide high efficiency in a wide range of applications and switching frequencies. Square RBSOA and Maximum Junction Temperature 175°C makes improved reliability due to rugged hard switching performance and higher power capability. Positive VcE (ON) Temperature Coefficient provides excellent current sharing in parallel operation.
IRG7CH11K10EF Features
Low VcE(ON) and switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VcE (ON) Temperature Coefficient
Collector-Emitter Voltage, Tj=25°C: 1200V
Clamped Inductive Load Current④: 200A
Gate Emitter Voltage: ±30V
IRG7CH11K10EF Applications
Medium Power Drives
UPS
HEV Inverter
Welding
Induction Heating
