IRG8CH42K10F Description
IRG8CH42K10F transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG8CH42K10F MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG8CH42K10F has the common source configuration.
IRG8CH42K10F Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG8CH42K10F Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
