Name: IRLR7821TRPBF
Brand: Infineon Technologies
SKU: IRLR7821TRPBF
Availability: InStock

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IRLR7821TRPBF

Manufacturer part number:IRLR7821TRPBF

Manufacturer:Infineon Technologies

Description:IRLR7821TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLR7821TRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	THROUGH-HOLE
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	75W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1030pF @ 15V
Current - Continuous Drain (Id) @ 25°C	65A Tc
Gate Charge (Qg) (Max) @ Vgs	14nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
JEDEC-95 Code	TO-251AA
Drain Current-Max (Abs) (ID)	65A
Drain-source On Resistance-Max	0.01Ohm
Pulsed Drain Current-Max (IDM)	260A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	230 mJ
RoHS Status	ROHS3 Compliant

IRLR7821TRPBF Product Details

IRLR7821TRPBF MOSFET Description

The IRLR7821TRPBF MOSFET adopts the HEXFET technique from Infineon, enriching its applications to a large spectrum of uses. It has superior performance in switching high current loads due to its ultra-low gate impedance. It is a fully Characterized Avalanche Voltage and Current power MOSFET with very low on-resistance.