PHD66NQ03LT,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 90 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 860pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 66A.There is a peak drain current of 228A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 25V, it should remain above the 25V level.The transistor must receive a 25V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
PHD66NQ03LT,118 Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 228A.
a 25V drain to source voltage (Vdss)
PHD66NQ03LT,118 Applications
There are a lot of NXP USA Inc.
PHD66NQ03LT,118 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
