BSS110 Description
This high cell density, DMOS P-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. This extremely dense technique is meant to minimize on-state resistance, offer tough and dependable performance, and enable quick switching. They can deliver pulsed currents up to 0.68A and can be employed with little effort in the majority of applications requiring up to 0.17A DC. This product is best suited for low voltage applications that need a high side switch with a low current.
BSS110 Features
BSS84: -0.13A, -50V. RDS(ON) = 10W @ VGS = -5V.
BSS110: -0.17A, -50V. RDS(ON) = 10W @ VGS = -10V
Voltage controlled p-channel small signal switch.
High density cell design for low RDS(ON) .
High saturation current.
BSS110 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
