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IRGS6B60KDPBF

  • IRGS6B60KDPBF - IRGS6B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
  • IRGS6B60KDPBF - IRGS6B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

IRGS6B60KDPBF

IRGS6B60KDPBF

Infineon Technologies

IRGS6B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGS6B60KDPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2012
JESD-609 Code e3
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation90W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating13A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRGS6B60KDPBF
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation90W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time17ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 13A
Reverse Recovery Time 70 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2V
Turn On Time45 ns
Test Condition 400V, 5A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 5A
Turn Off Time-Nom (toff) 258 ns
IGBT Type NPT
Gate Charge18.2nC
Current - Collector Pulsed (Icm) 26A
Td (on/off) @ 25°C 25ns/215ns
Switching Energy 110μJ (on), 135μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 27ns
Height 4.699mm
Length 10.668mm
Width 9.65mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2212 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.751644$1.751644
10$1.652494$16.52494
100$1.558957$155.8957
500$1.470714$735.357
1000$1.387466$1387.466

IRGS6B60KDPBF Product Details

IRGS6B60KDPBF Description


The Infineon Technologies IRGS6B60KDPBF is an IGBT with an ultrafast soft recovery diode.



IRGS6B60KDPBF Features


  • Low VCE (on) Non-Punch Through IGBT Technology

  • Low Diode VF

  • 10μs Short Circuit Capability

  • Square RBSOA

  • Ultrasoft Diode Reverse Recovery Characteristics

  • Positive VCE (on) Temperature Coefficient

  • Lead-Free



IRGS6B60KDPBF Applications


  • Industrial

  • Automotive


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