IRGP4062-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP4062-EPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
250W
Element Configuration
Single
Input Type
Standard
Power - Max
250W
Collector Emitter Voltage (VCEO)
1.95V
Max Collector Current
48A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.04V
Test Condition
400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 24A
IGBT Type
Trench
Gate Charge
75nC
Current - Collector Pulsed (Icm)
72A
Td (on/off) @ 25°C
41ns/104ns
Switching Energy
115μJ (on), 600μJ (off)
Height
20.7mm
Length
15.87mm
Width
5.13mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:1036 items
IRGP4062-EPBF Product Details
IRGP4062-EPBF Description
IRGP4062-EPBF is a single IGBT from the manufacturer Infineon Technologies with the break down voltage of 600V. The operating temperature of IRGP4062-EPBF is -55°C~175°C TJ and its maximum power dissipation is 250W. IRGP4062-EPBF has 3 pins and it is available in Tube (TR) packaging way. The Collector Emitter Saturation Voltage of IRGP4062-EPBF is 2.04V.
IRGP4062-EPBF Features
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) Temperature co-efficient
Tight parameter distribution
Lead Free Package
IRGP4062-EPBF Applications
High Efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation
Low EMI
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