IRG4PH40KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4PH40KDPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
1.2kV
Max Power Dissipation
160W
Peak Reflow Temperature (Cel)
250
Current Rating
30A
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Element Configuration
Single
Power Dissipation
160W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
50 ns
Transistor Application
MOTOR CONTROL
Rise Time
31ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
96 ns
Collector Emitter Voltage (VCEO)
3.4V
Max Collector Current
30A
Reverse Recovery Time
63 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
3.4V
Turn On Time
82 ns
Test Condition
800V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.4V @ 15V, 15A
Turn Off Time-Nom (toff)
730 ns
Gate Charge
94nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
50ns/96ns
Switching Energy
1.31mJ (on), 1.12mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
3V
Height
20.3mm
Length
15.875mm
Width
5.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4268 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.68000
$6.68
25
$5.66840
$141.71
100
$4.91260
$491.26
500
$4.18198
$2090.99
IRG4PH40KDPBF Product Details
IRG4PH40KDPBF Description
IRG4PH40KDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRGP4263DPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT that works between 10 and 600 volts. Infineon Technologies IRGP4263DPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters that require high isolation voltage and long-term dependability.
IRG4PH40KDPBF Features
Floating channel designed for bootstrap operation Undervoltage lockout Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes
IRG4PH40KDPBF Applications
Light vehicles Power Management (SMPS) Reference Design Power tools Robotics
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