IRG7PH46U-EP Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IRG7PH46U-EP Features
? Low VCE (ON) trench IGBT technology
? Low switching losses
? Maximum junction temperature 175 °C
? Square RBSOA
? 100% of the parts tested for ILM
? Positive VCE (ON) temperature co-efficient
? Tight parameter distribution
? Lead -Free
IRG7PH46U-EP Applications
? U.P.S
? Welding
? Solar inverter
? Induction heating
