Name: IRG4BC30U-STRRP
Brand: Infineon Technologies
SKU: IRG4BC30U-STRRP
Availability: InStock

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IRG4BC30U-STRRP

Manufacturer part number:IRG4BC30U-STRRP

Manufacturer:Infineon Technologies

Description:IRG4BC30U-STRRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4BC30U-STRRP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	260.39037mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	MATTE TIN OVER NICKEL
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRG4BC30U-SPBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	100W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	23A
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	33 ns
Test Condition	480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 12A
Turn Off Time-Nom (toff)	320 ns
Gate Charge	50nC
Current - Collector Pulsed (Icm)	92A
Td (on/off) @ 25°C	17ns/78ns
Switching Energy	160μJ (on), 200μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	150ns
Radiation Hardening	No
RoHS Status	RoHS Compliant

IRG4BC30U-STRRP Product Details

IRG4BC30U-STRRP Description

IRG4BC30U-STRRP, manufactured by Infineon Technologies and distributed by Utmel Electronics. It is under the IGBT Modules category. It is used in a variety of industries, including enterprise computing, communications equipment, and advanced driver assistance systems (ADAS) for automobiles. The primary variables for this portion are: IGBT transistor; TO-220AB package/case; 600V C-E breakdown voltage; 2.1V Collector-Emitter Saturation Voltage; 100W Power Dissipation; 12A Continuous Collector Current @ 100 C; Yes, RoHS compliance. It is also environmentally friendly and RoHS compatible (Lead-free / RoHS Compliant).