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IRGP4750DPBF

IRGP4750DPBF

IRGP4750DPBF

Infineon Technologies

IRGP4750DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4750DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-40°C~175°C TJ
PackagingTube
Published 2006
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation273W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element ConfigurationSingle
Input Type Standard
Power - Max 273W
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 70A
Reverse Recovery Time 150 ns
Collector Emitter Breakdown Voltage650V
Collector Emitter Saturation Voltage1.7V
Test Condition 400V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A
Gate Charge105nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 50ns/105ns
Switching Energy 1.3mJ (on), 500μJ (off)
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
In-Stock:4755 items

IRGP4750DPBF Product Details

IRGP4750DPBF Description

IRGP4750DPBFis a insulated gate bipolar transistor with Ultrafast soft recovery diode.


IRGP4750DPBFApplications

Industrial Motor Drive

UPS

Solar Inverters

Welding

IRGP4750DPBFFeatures

Low VCEON) and Switching Losses

5.5us Short Circuit SOA

Square RBSOA

Maximum Junction Temperature175°C

Positive VCE(ON)Temperature Coefficient

Lead-Free RoHs compliant




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