Description
The IRG8P60N120KDPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The IRG8P60N120KDPBF belongs to an insulated-gate bipolar transistor (IGBT). It is a three-terminal power semiconductor device principally used as an electronic switch that evolved to combine high efficiency and fast switching as it was developed. A metal-oxide-semiconductor (MOS) gate arrangement controls four alternating layers (P–N–P–N).
Features
? Excellent switching characteristics
? Switching characteristics
? High input impedance
? Requirements for gate drive are reduced
? Circuitry for a small snubber
? Impedance of high input
? Device with a voltage regulator
? Bipolar nature results in increased conduction.
? Safer Working Environment
Applications
? Drive for industrial motors
? UPS
? Inverters for solar power
? Welding
? Industrial technology
