IRG7PSH73K10PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IRG7PSH73K10PBF Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-274AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2010
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
1.15kW
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.15kW
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
63 ns
Power - Max
1150W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
267 ns
Collector Emitter Voltage (VCEO)
2.3V
Max Collector Current
220A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2V
Turn On Time
172 ns
Test Condition
600V, 75A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 75A
Turn Off Time-Nom (toff)
567 ns
IGBT Type
Trench
Gate Charge
360nC
Current - Collector Pulsed (Icm)
225A
Td (on/off) @ 25°C
63ns/267ns
Switching Energy
7.7mJ (on), 4.6mJ (off)
Gate-Emitter Thr Voltage-Max
7.5V
Height
20.8mm
Length
16.0782mm
Width
5.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:2791 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.380714
$1.380714
10
$1.302560
$13.0256
100
$1.228830
$122.883
500
$1.159274
$579.637
1000
$1.093654
$1093.654
IRG7PSH73K10PBF Product Details
IRG7PSH73K10PBF Descriptions
IRG7PSH73K10PBF is a bipolar transistor from the manufacturer of Infineon Technologies with a maximum voltage of 1200V and a maximum current of 220A. The operating temperature of IRG7PSH73K10PBF is -55°C~175°C TJ and its maximum power dissipation are 1.15kW. IRG7PSH73K10PBF has 3 pins and it is available in TO-274AA packaging way. The Turn-On Delay Time of IRG7PSH73K10PBF is 63 ns and the Turn-Off Delay Time is 267 ns.
IRG7PSH73K10PBF Features
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
10 μS short Circuit SOA
Square RBSOA
100% of The Parts Tested for ILM
Positive VCE (ON) Temperature Coefficient
Tight Parameter Distribution
Lead-Free Package
IRG7PSH73K10PBF Applications
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
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