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FGA25N120ANTU

FGA25N120ANTU

FGA25N120ANTU

ON Semiconductor

FGA25N120ANTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA25N120ANTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Supplier Device Package TO-3P
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC 1.2kV
Max Power Dissipation310W
Current Rating25A
Base Part Number FGA25N120A
Element ConfigurationSingle
Power Dissipation310W
Input Type Standard
Power - Max 310W
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 40A
Continuous Drain Current (ID) 25A
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 40A
Test Condition 600V, 25A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A
IGBT Type NPT
Gate Charge200nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 60ns/170ns
Switching Energy 4.8mJ (on), 1mJ (off)
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4381 items

FGA25N120ANTU Product Details

FGA25N120ANTU Description

FGA25N120ANTU transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGA25N120ANTU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor FGA25N120ANTU has the common source configuration.

FGA25N120ANTU Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FGA25N120ANTU Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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