Name: IRG4PSH71UPBF
Brand: Infineon Technologies
SKU: IRG4PSH71UPBF
Availability: InStock

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IRG4PSH71UPBF

Manufacturer part number:IRG4PSH71UPBF

Manufacturer:Infineon Technologies

Description:IRG4PSH71UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PSH71UPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-274AA
Number of Pins	3
Supplier Device Package	SUPER-247™ (TO-274AA)
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2004
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	600V
Max Power Dissipation	350W
Current Rating	99A
Element Configuration	Single
Power Dissipation	350W
Input Type	Standard
Power - Max	350W
Rise Time	70ns
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	99A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	99A
Collector Emitter Saturation Voltage	2.7V
Test Condition	960V, 70A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 70A
Gate Charge	370nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	51ns/280ns
Switching Energy	4.77mJ (on), 9.54mJ (off)
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRG4PSH71UPBF Product Details

The Infineon Technologies IRG4PSH71UPBF is an N-Channel Insulated Gate Bipolar Transistor.

UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
Industry-benchmark Super-247 package with higher power handling capability compared to the same footprint TO-247
Creepage distance increased to 5.35mm