IRGP4065DPBF Description
The IRGP4065DPBF IGBT is made primarily for use in Plasma Display Panel applications. In order to achieve low VCE(on) and low EPULSETM rating per silicon area, this device uses advanced trench IGBT technology, which increases panel efficiency. Operating junction temperature of 150 °C and high repeated peak current capacity are further features. These characteristics work together to make this IGBT a very effective, durable, and trustworthy device for PDP applications.
IRGP4065DPBF Features
Lead-Free Package
Advanced Trench IGBT Technology
High Repetitive Peak Current Capability
Optimized for Sustain and Energy Recovery Circuits in PDP Applications
Low VCE(on) and Energy per Pulse (EPULSETM) for Improved Panel Efficiency
IRGP4065DPBF Applications
Automotive
Enterprise systems
Communications equipment
