HGTG30N60B3D Description
The HGTG30N60B3D is a MOS gated high voltage switching device that combines MOSFET and bipolar transistor capabilities. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. The TA49170 development type IGBT was used. The TA49053 development type diode is utilized in anti-parallel with the IGBT.
HGTG30N60B3D Features
? TC = 25oC, 60A, 600V
? SOA Switching Capability of 600V
? At TJ = 150oC, the typical fall time is 90ns.
? Short-circuit protection
? Low Loss of Conduction
? Anti-Parallel Hyper-Fast Diode
HGTG30N60B3D Applications
?Scale of measurement
