Name: IRG7PH42UD1PBF
Brand: Infineon Technologies
SKU: IRG7PH42UD1PBF
Availability: InStock

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IRG7PH42UD1PBF

Manufacturer part number:IRG7PH42UD1PBF

Manufacturer:Infineon Technologies

Description:IRG7PH42UD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG7PH42UD1PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN OVER NICKEL
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	313W
Peak Reflow Temperature (Cel)	250
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Single
Power Dissipation	313W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	300 ns
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	85A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.7V
Test Condition	600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
Turn Off Time-Nom (toff)	460 ns
IGBT Type	Trench
Gate Charge	180nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	-/270ns
Switching Energy	1.21mJ (off)
Gate-Emitter Thr Voltage-Max	6V
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

IRG7PH42UD1PBF Product Details

IRG7PH42UD1PBF Description

IRG7PH42UD1PBF is a 1200v insulated gate bipolar transistor with an ultra-low VF diode for induction heating and soft switching applications. The Infineon IRG7PH42UD1PBF provides high efficiency due to low VCE(on), low switching losses and ultra-low VF, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG7PH42UD1PBF is in the TO-247AC package with 313w Power Dissipation.