Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STGW40NC60WD

STGW40NC60WD

STGW40NC60WD

STMicroelectronics

STGW40NC60WD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGW40NC60WD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation250W
Current Rating40A
Base Part Number STGW40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation250W
Input Type Standard
Turn On Delay Time33 ns
Transistor Application POWER CONTROL
Rise Time12ns
Drain to Source Voltage (Vdss) 650V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 168 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Reverse Recovery Time 45 ns
Continuous Drain Current (ID) 40A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.1V
Input Capacitance2.9nF
Turn On Time46 ns
Test Condition 390V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Continuous Collector Current 40A
Turn Off Time-Nom (toff) 280 ns
Gate Charge126nC
Current - Collector Pulsed (Icm) 230A
Td (on/off) @ 25°C 33ns/168ns
Switching Energy 302μJ (on), 349μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4801 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.96000$2.96

STGW40NC60WD Product Details

STGW40NC60WD IGBT Description


The STGW40NC60WD is an ultrafast IGBT of 600 V Collector-Emitter voltage capability. It has a fast turn-on delay time and excels in low on-state performance. The sophisticated PowerMESHTM technology is used in this IGBT, resulting in a superb trade-off between switching performance and low on-state behavior.



STGW40NC60WD IGBT Features


Low CRES/ CIES ratio (no cross conduction susceptibility)

IGBT co-packaged with ultra-fast free-wheeling diode

Collector-Emitter voltage: 600 V

Collector current: 37 A

Turn-on delay time (typical): 33 ns



STGW40NC60WD IGBT Applications


High-frequency inverters, UPS

Motor drivers

HF, SMPS, and PFC in both hard switch and resonant topologies

Welding

Induction heating


Get Subscriber

Enter Your Email Address, Get the Latest News