STGB18N40LZ-1 Description
This application-specific IGBT utilizes the mostadvanced PowerMESH? technology. The built-inZener diodes between gate-collector and gateemitter provide overvoltage protectioncapabilities. The device also exhibits low on-statevoltage drop and low threshold drive for use inautomotive ignition system.
STGB18N40LZ-1 Features
? Designed for automotive applications and
AEC-Q101 qualified
? 180 mJ of avalanche energy @ TC = 150 °C,
L = 3 mH
? ESD gate-emitter protection
? Gate-collector high voltage clamping
? Logic level gate drive
? Low saturation voltage
? High pulsed current capability
? Gate and gate-emitter resistor
STGB18N40LZ-1 Application
? Pencil coil electronic ignition driver
