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GT50J121(Q)

GT50J121(Q)

GT50J121(Q)

Toshiba Semiconductor and Storage

Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH)

SOT-23

GT50J121(Q) Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature150°C TJ
PackagingTube
Published 2006
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation240W
Element ConfigurationSingle
Input Type Standard
Power - Max 240W
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 50A
Collector Emitter Breakdown Voltage600V
Test Condition 300V, 50A, 13 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 90ns/300ns
Switching Energy 1.3mJ (on), 1.34mJ (off)
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2104 items

About GT50J121(Q)

The GT50J121(Q) from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH).

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the GT50J121(Q), including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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