NGTB40N120FL2WAG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. In addition, this newdevice is packaged in a TO?247?4L package that provides significantreduction in Eon Losses compared to standard TO?247?3L package.The IGBT is well suited for UPS and solar applications. Incorporatedinto the device is a soft and fast co?packaged free wheeling diode witha low forward voltage.
NGTB40N120FL2WAG Features
? Extremely Efficient Trench with Field Stop Technology
? TJmax = 175°C
? Improved Gate Control Lowers Switching Losses
? Separate Emitter Drive Pin
? TO?247?4L for Minimal Eon Losses
? Optimized for High Speed Switching
? These are Pb?Free Devices
NGTB40N120FL2WAG Applications
? Solar Inverter
? Uninterruptible Power Inverter Supplies (UPS)
? Neutral Point Clamp Topology
