IRG4RC10UDTRRP Description
IRG4RC10UDTRRP is a type of insulated gate bipolar transistor with ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, ＞200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10UDTRRP IGBT ensures lower losses than MOSFET's conduction and Diode losses.
IRG4RC10UDTRRP Features
Industry-standard TO-252AA packages
Extremely tight Vce(on) distribution
Tighter parameter distribution
Highest efficiencies available
IRG4RC10UDTRRP Applications
Industrial motor drive
Solar inverters
Welding
