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IRG4PH50SPBF

IRG4PH50SPBF

IRG4PH50SPBF

Infineon Technologies

IRG4PH50SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PH50SPBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2004
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Voltage - Rated DC 1.2kV
Max Power Dissipation200W
Current Rating57A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time32 ns
Transistor Application POWER CONTROL
Rise Time29ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 845 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 57A
Continuous Drain Current (ID) 57A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage1.2kV
Gate to Source Voltage (Vgs) 30V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage1.75V
Input Capacitance3.6nF
Turn On Time62 ns
Test Condition 960V, 33A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 33A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 57A
Turn Off Time-Nom (toff) 2170 ns
Gate Charge167nC
Current - Collector Pulsed (Icm) 114A
Td (on/off) @ 25°C 32ns/845ns
Switching Energy 1.8mJ (on), 19.6mJ (off)
Height 24.99mm
Length 15.875mm
Width 5.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1561 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.86000$6.86
10$6.15700$61.57
100$5.04440$504.44
500$4.29422$2147.11

IRG4PH50SPBF Product Details

IRG4PH50SPBF Description


The Infineon Technologies IRG4PH50SPBF is an insulated gate bipolar transistor, a Generation 4 IGBT design that provides tighter parameter distribution and higher efficiency than Generation 3.



IRG4PH50SPBF Features


  • Generation 4 IGBTs offer the highest efficiency available

  • IGBT's optimized for specific application conditions

  • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs



IRG4PH50SPBF Applications


  • Power Supply


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