IRG4PF50WDPBF

Name: IRG4PF50WDPBF
Brand: Infineon Technologies
SKU: IRG4PF50WDPBF
Availability: InStock

new-10%

Manufacturer part number:IRG4PF50WDPBF

Manufacturer:Infineon Technologies

Description:IRG4PF50WDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PF50WDPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1998
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	900V
Max Power Dissipation	200W
Terminal Position	SINGLE
Current Rating	51A
Number of Elements	1
Element Configuration	Dual
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	71 ns
Transistor Application	POWER CONTROL
Rise Time	52ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	150 ns
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	51A
Reverse Recovery Time	90 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	900V
Collector Emitter Saturation Voltage	2.25V
Turn On Time	121 ns
Test Condition	720V, 28A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 28A
Turn Off Time-Nom (toff)	460 ns
Gate Charge	160nC
Current - Collector Pulsed (Icm)	204A
Td (on/off) @ 25°C	71ns/150ns
Switching Energy	2.63mJ (on), 1.34mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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